GaAs solar cell structure
Optical design of ultra-thin GaAs solar cells based on trapezoidal pyramid structure …
To further investigate the response of this optimized GaAs solar cells in the solar spectrum [45, 46], we studied and analyzed the absorption efficiency of GTCs and planar GACs in the AM1.5 solar spectrum.As depicted in Fig. 3 (a), the average absorbance of the planar GACs is 85.46 % over the entire wavelength range of 300–1100 nm.
Numerical analysis for radiation‐resistant GaAs heteroface solar cell structures …
Experimental studies and numerical analyses are carried out to optimize A1GaAs‐GaAs heteroface solar cell structures. Carrier removal rate and damage constant for diffusion length in n‐GaAs due to 1‐MeV electron irradiation are found to be larger than those in p‐GaAs.‐GaAs.
High‐efficiency GaAlAs/GaAs heterostructure solar cells grown …
High‐efficiency GaAlAs/GaAs heterostructure solar cells have been grown by metalorganic chemical vapor deposition (MO−CVD). Simulated air‐mass‐zero (AM0) short‐circuit current densities of 24.5 mA/cm 2, open‐circuit voltages of 0.99 V, fill factors of 0.74, and efficiencies of 12.8% have been measured on devices without AR coatings …
Inverse design of GaAs nanowire array solar cell structures with …
Non-uniform diameter GaAs nanowire array solar cell structures are designed using the particle swarm optimized inverse design method. The results show that unlike the uniform diameter structure, which has a series of absorption valleys, the absorption spectra of the non-uniform structures are much flatter, which is attributed to a …
Nano-structured GaAs Solar Cell Design, Simulation and Analysis for Conversion Efficiency Improvement …
This paper discusses nano-structured GaAs solar cell design and analysis for conversion efficiency improvement by increasing the light transmission and absorption, reducing the light reflection. The focus of this research is to construct different type of nano-grating shaped GaAs solar cells with various nano-grating heights and pitches, to …
The performance analysis of the GaAs/c-InN solar photovoltaic cell hetero-structure: temperature dependence
The numerical analysis of the GaAs/c-InN solar photovoltaic cell (SPC) hetero-structure has been investigated by means of an analytical solar cell model in the temperature range 200–400 K to determine and develop solar cell performance. Temperature-band gap dependency for GaAs and InN materials has been determined by …
Improving the irradiation resistance of inverted flexible 3J solar cells by adjusting the structure …
Flexible thin-film IMM3J solar cells with an area of 12 cm 2 were fabricated using MOCVD and epitaxial lift-off (ELO). The main structure of IMM3J cells is shown in Fig. 1.Epitaxy layers were inverted and grown on …
The Design and Optimization of GaAs Single Solar Cells Using the Genetic Algorithm and Silvaco ATLAS
The GaAs solar cell has greater electron saturation velocity and higher electron mobility compared with silicon solar cells []. ... In this section, two steps are performed, the first one is an initial single-structure …
Gallium arsenide solar cells grown at rates exceeding 300 µm h
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h−1 using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride ...
(PDF) High-Efficiency GaAs-Based Solar Cells
The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar...
21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact
Traditional GaAs solar cells require a complex stack of doped junctions, which can only be grown using epitaxy, which is a very costly technique. Herein, a …
Semiconductor Wafer Bonding for Solar Cell Applications: A …
3.1.2 Inverted Growth and Bonding Scheme The previous section noted that Ge is not the optimal choice as the bottom subcell in triple-junction solar cells. Instead, researchers have used an alternative approach involving the growth of a 1.0 eV In 0.3 Ga 0.7 As subcell, lattice-mismatched to GaAs by 2%, on an inversely grown GaAs/InGaP …
Overview of the Current State of Gallium Arsenide-Based Solar …
This review summarizes past, present, and future uses of GaAs photovoltaic cells. It examines advances in their development, performance, and various current …
Materials | Free Full-Text | Overview of the Current …
As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although …
Modeling and simulation of high-efficiency GaAs PIN solar cells
A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a …
Enhanced performance of Graphene/AlGaAs/GaAs heterostructure Schottky solar cell …
In this work, a new solar cell structure is presented by drainage AlGaAs inside GaAs. The results of the presented structure are investigated at temperatures of 273 K, 300 K, and 323 K, and the power conversion efficiencies (PCE) of 19.95%, 19.45%, and 19.01% are obtained, respectively. In the proposed structure, due to the increase in the …
Analysis of AlGaAs/GaAs solar cell structures by optical …
The control of the thickness and composition of the GaAs cap and AlGaAs window layers is essential to the fabrication of high-efficiency AlGaAs/GaAs heteroface solar cells. The use of optical reflectance spectroscopy for the analysis of these structures is presented. The calculation of the reflectance of a system of thin films is described along with the …
GaAs and High-Efficiency Space Cells
2. Single-Junction III–V Space Solar Cells2.1. Solar cells based on AlGaAs–GaAs structures Among different investigated heterostructures based on III–V heterojunctions appropriate for fabrication of single-junction solar cells, AlGaAs–GaAs heterostructures have found the first application due to the well-matched lattice …
Germanium-on-Nothing for Epitaxial Liftoff of GaAs …
We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores …
Modelling and simulation of AlGaAs/GaAs solar cell
As compared to GaAs solar cell with no ARC layer, GaAs solar cell with Al2O3 ARC layer (90 nm) presented the high power conversion efficiency (PCE) of 24.60% at absorber thickness 6 μm and 30 nm ...
21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact
3D schematic of two different kinds of solar cells that we will discuss in this article (for description, see Experimental Section).For both device 1 and device 2, we study the effect of bilayer selective contact. In a previous report, we already showed ZnO as an ESC ref. 19, and studied different deposition conditions for ZnO as an ESC, with and …
GaAs solar cells grown on acoustically spalled GaAs substrates …
Acoustically spalled substrates offer the potential for cost reduction in high-efficiency III–V photovoltaics, but spalling can generate features on the substrate surface that may complicate epitaxial growth of subsequent devices. We grew GaAs solar cells on previously spalled surfaces and developed control over defects that stem from growth …
Highly efficient single-junction GaAs thin-film solar cell on flexible …
There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency …
Design and optimization of nanostructure antireflection film for thin GaAs solar cells …
The two-dimension (2D) steady-state photo-electric models of solar cells are established in COMSOL Multiphysics software. The single-junction thin gallium arsenide (GaAs) cell without ARF is shown in Fig. 1 (a), including window layer, emitter layer, base layer, back surface field layer and substrate, which is named "Base case".
GaAs photovoltaics and optoelectronics using …
Multilayer structures for MESFETs, NIR imagers and heterogeneous devices (MESFETs, NIR photodetectors and solar cells) were grown on an n-type Si-doped GaAs(100) substrate using a Thomas...
Potential high efficiency of GaAs solar cell with heterojunction …
A 4-terminal GaAs/c-Si tandem solar cell configuration with an estimated conversion performance of 35.16% is proposed. These results indicate enormous …
A Brief Review of High Efficiency III-V Solar Cells for Space …
A Brief Review of High Efficiency III-V Solar Cells for Space ...
Investigation of n-ZnO/p-GaAs Heterojunction Solar Cell Using …
The n-ZnO/p-GaAs heterojunction is a promising structure to reach good conversion efficiency owing to the important optical and electrical properties of both zinc oxide (ZnO) and gallium arsenide (GaAs) semiconductors. In this work, the n-ZnO/p-GaAs heterojunction solar cell was studied to estimate the best photovoltaic parameters of the …
Flexible thin-film InAs/GaAs quantum dot solar cells
Photovoltaic solar cells with semiconductor quantum dots (QDs) can potentially realize ultrahigh-efficiency solar-energy conversion in single p-n junction structures utilizing intermediate-level energy bands. 1 Among the wide range of semiconductor materials for QD solar cells currently under intensive study, 2 those using …
Progress and prospects for ultrathin solar cells | Nature Energy
Models that include a complete solar cell structure lead to significantly lower performances 31,32. Actually, most ... This paper reports the fabrication of an ultrathin GaAs solar cell (t = 205 ...
The Design and Optimization of GaAs Single Solar Cells Using …
In this paper, a single GaAs solar cell was designed and optimized in two phases; the first was by building a structure with new layers like the buffer and the BSF …
Six-junction III–V solar cells with 47.1% conversion …
Six-junction III–V solar cells with 47.1% conversion ...
Simulation study of TiO2 single layer anti-reflection coating for GaAs solar cell …
Behind 300 nm, the diffusion length of GaAs solar cell material increases spontaneously and reaches 1.90 × 10 5 for GaAs solar cells without ARC and 1.97 × 10 5 for GaAs solar cells with TiO 2 ARC. The photogeneration rate of bare GaAs solar cells is 1 × 10 19 (1/S), whereas the TiO 2 layer coated GaAs solar cell has a higher …
Gallium Arsenide
GaAs and High-Efficiency Space Cells V.M. Andreev, in Practical Handbook of Photovoltaics (Second Edition), 20123.2 Monolithic Multijunction Solar Cells In monolithic AlGaAs–GaAs tandems consisting of an Al 0.37 Ga 0.63 As (E g =1.93 eV) upper cell and a GaAs lower cell were grown by MOCVD [45]..
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